Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-03-06
1998-06-02
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
117 7, 117 9, H01L 2184
Patent
active
057598797
ABSTRACT:
A method for forming a polycrystalline silicon film includes the steps of: forming at least one step on a surface of an insulating substrate; depositing a first amorphous silicon film on the substrate; annealing the first amorphous silicon film so as to change the first amorphous silicon film into a first polycrystalline silicon film; patterning the first polycrystalline silicon film to form a patterned film at the at least one step of the insulating substrate, the patterned film having at least one side face; depositing a second amorphous silicon film on the insulating substrate so as to cover the patterned film; and annealing the second amorphous silicon film so as to change the second amorphous silicon film into a second polycrystalline silicon film by using the at least one side face of the pattered film as a seed crystal for lateral solid-phase crystallization.
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Oda et al, Extended Abstracts (The 38The Spring Meeting, 1991); The Japan Society of Applied Physics and Related Societies No. 2, "Study of Solid Phase Epitaxy Using U-LPCVD".
Booth Richard A.
Niebling John
Sharp Kabushiki Kaisha
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