Method for forming polycrystalline silicon film and method for f

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

117 7, 117 9, H01L 2184

Patent

active

057598797

ABSTRACT:
A method for forming a polycrystalline silicon film includes the steps of: forming at least one step on a surface of an insulating substrate; depositing a first amorphous silicon film on the substrate; annealing the first amorphous silicon film so as to change the first amorphous silicon film into a first polycrystalline silicon film; patterning the first polycrystalline silicon film to form a patterned film at the at least one step of the insulating substrate, the patterned film having at least one side face; depositing a second amorphous silicon film on the insulating substrate so as to cover the patterned film; and annealing the second amorphous silicon film so as to change the second amorphous silicon film into a second polycrystalline silicon film by using the at least one side face of the pattered film as a seed crystal for lateral solid-phase crystallization.

REFERENCES:
patent: 4381202 (1983-04-01), Mori et al.
patent: 4933298 (1990-06-01), Hasagawa
patent: 5531182 (1996-07-01), Yonehara
patent: 5549747 (1996-08-01), Bozler et al.
patent: 5637515 (1997-06-01), Takamura
patent: 5639698 (1997-06-01), Yamazaki et al.
Asano et al, Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, "Thin-Film Transistor Characteristics Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps", pp. 999-1001, 1993.
Oda et al, Extended Abstracts (The 38The Spring Meeting, 1991); The Japan Society of Applied Physics and Related Societies No. 2, "Study of Solid Phase Epitaxy Using U-LPCVD".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming polycrystalline silicon film and method for f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming polycrystalline silicon film and method for f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming polycrystalline silicon film and method for f will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1458953

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.