Method for forming poly-silicon film

Details Method for forming poly-silicon film Method for forming poly-silicon film

2011-04-12

2011-04-12

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S488000, C438S511000, C257SE31047, C257SE21316

Reexamination Certificate

active

07923357

ABSTRACT:
A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.

REFERENCES:
patent: 4642414 (1987-02-01), Rasch et al.
patent: 5894037 (1999-04-01), Kikuchi et al.
patent: 2005/0260862 (2005-11-01), Komatsu et al.
patent: 2006/0051911 (2006-03-01), Gu et al.
patent: 7-86173 (1995-03-01), None
patent: 9-129562 (1997-05-01), None

Affiliated with

Also associated with

Rating

Method for forming poly-silicon film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming poly-silicon film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming poly-silicon film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2633721