Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1996-05-09
1998-03-31
Fourson, George R.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
H01L 2176
Patent
active
057338132
ABSTRACT:
Planarized field isolation regions are formed in a semiconductor substrate to isolate adjacent semiconductor devices by implanting an isolation material, such as oxygen or nitrogen ions, into a substrate patterned to define the field isolation regions. The implanted isolation material combines with the silicon in the substrate to form a field isolation region that extends downward from the surface of the substrate.
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Chen Hung Sheng
Teng Chih Sieh
Fourson George R.
National Semiconductor Corporation
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