Method for forming planar metal/insulator structures

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156646, 156652, 156653, 156656, 156664, 156665, 156667, 427 86, 427 89, 427 90, 4271263, 427307, 427404, 427405, 4274192, 430314, 430316, 430318, 430323, 430324, H01L 21306, B44C 122, C03C 1500, C03C 2506

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043964583

ABSTRACT:
Formation of planar conductor/insulator semiconductor devices utilizing hafnium coated aluminum based metallization with a magnesium oxide mask for dry etching of the metallization and deposition of planar insulation.
The hafnium coating is used to protect the aluminum metallization during mask removal, and as a registration enhancer for subsequent electron-beam processing.

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