Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-11-01
2005-11-01
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S029000, C438S030000, C438S151000, C438S069000, C438S608000, C438S609000
Reexamination Certificate
active
06960497
ABSTRACT:
The present invention provides a method for improving the adhesion capability between the π-type bus electrode and ITO (indium tin oxide) transparent conductive layer. The method includes an ITO transparent conductive layer as an ITO electrode is formed on the glass substrate by sputtering method. Then, a photoresist layer with a cavity pattern is formed on the portion of the ITO transparent conductive film. Next, an etching process is used to remove portion of the ITO transparent conductive film to form a cavity within the ITO transparent conductive film. Then, after removing the photoresist layer, a silver paste as a bus electrode is formed on the glass substrate and on the ITO transparent conductor film to form a pi (π) type bus electrode by print method. Due to the pi side of the pi-type electrode is formed on the cavity thereby the adhesion capability between the pi-type bus electrode and exposed glass substrate within the cavity, such that the adhesion capability between the π type bus electrode and ITO conductive film can be improved. Thus, the edge warp phenomenon of the π type bus electrode can be diminished.
REFERENCES:
patent: 5252141 (1993-10-01), Inoue et al.
patent: 6156433 (2000-12-01), Hatori et al.
Cheng Ching-Chung
Huang Wen-Rung
Lee Sheng-Chi
Lin Yuan-Chi
Chunghwa Picture Tubes Ltd.
Guerrero Maria F.
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