Method for forming photoluminescence layer on a semiconductor la

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

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427527, 427535, 427563, 427578, C23C 1414, H05H 100, H05H 124

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active

056269218

ABSTRACT:
For forming a photoluminescence layer on a semiconductor layer, ions are irradiated to a surface portion of a semiconductor layer where a photoluminescence layer is to be formed, and then, the semiconductor layer is immersed in a solution containing hydrofluoric acid, whereby the ion-irradiated and hydrofluoric-acid-treated portion forms a photoluminescence layer.

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