Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1996-02-05
1997-10-21
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430311, G03F 700
Patent
active
056794991
ABSTRACT:
A method for fabricating a semiconductor device includes the steps of exposing and developing a resist film applied on a conductive film formed over a semiconductor substrate, and removing a resist residue developed on the resist film. The removal of a resist residue is made by irradiating thereon the helium plasma generated using a helium gas in a parallel plate type plasma etching system. Thereafter, the conductive film is dry-etched and patterned using the resist film as a mask. The use of the helium gas plasma etching process enables the delaying of the etching rate and the suppression of the thinning of the resist film thereby enhancing the size precision of the photo mask.
REFERENCES:
patent: 5332625 (1994-07-01), Dunn
patent: 5401613 (1995-03-01), Brewer
patent: 5431774 (1995-07-01), Douglas
Duda Kathleen
NEC Corporation
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