Method for forming patterns

Details Method for forming patterns Method for forming patterns

1984-12-26

1986-07-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156652, 156656, 1566611, 204192EC, 204192E, 204298, 365 1, 427127, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

045978263

ABSTRACT:
A method is disclosed of forming a fine pattern on a substrate, in which an etching mask pattern is formed on a layer of material of a pattern to be formed, an overlying layer is deposited on the pattern material layer and the mask pattern, and thereafter, the overlying layer and the pattern material layer are etched by ion etching. This method makes it possible, due to the pattern-widening effect caused by the deposition of the overlying layer and by the use of ion etching, to form a pattern having a gap smaller than 0.5 .mu.m or a contiguous-disk pattern having a period of 2 .mu.m or less by photolithography having a 1 .mu.m resolution. It is also possible to form a pattern adapted to enable an easy planing process, by utilizing a difference in etching rates between the mask pattern and the overlying layer. An apparatus used for carrying out the pattern forming method comprises film layer forming means and ion etching means, whereby the overlying layer forming step and the ion etching step can be successively performed by using one and the same apparatus.

REFERENCES:
patent: 3563809 (1971-02-01), Wilson
patent: 4053349 (1977-10-01), Simko
IBM Technical Disclosure Bulletin, vol. 21, No. 11, Apr. 1979, Platinum Contact/Chromium Barrier Metallurgical Processing Technique by Ion Milling, pp. 4503-4504.

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