Method for forming patterned tungsten layers

Details Method for forming patterned tungsten layers Method for forming patterned tungsten layers

1991-10-28

1993-01-05

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 1566591, 156656, 437187, H01L 2100

Patent

active

051767929

ABSTRACT:
The present applicants have discovered that a layer predominantly comprising tungsten can be formed into precise patterns having substantially vertical walls by using titanium as a mask and plasma etching in a fluorine-containing plasma such as CF.sub.4 or SF.sub.6. The success of the process is believed attributable to the occurrence of an etch stop reaction on the sidewalls of the tungsten. The products of the reaction inhibit horizontal etching. After the tungsten is etched, the titanium mask can be selectively removed, as by etching in dilute HF. Each step in the process can be effected without subjecting the workpiece to voltage magnitudes in excess of 200 volts or temperatures outside the range between room temperature and 200.degree. C.

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Tennant et al. J. Vac. Sci. Technol. B7, 1836 (1989).
Tachi et al. J. Vac. Sci. Technol. A9, 796 (1991).

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