Method for forming patterned films on a substrate

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156643, 156644, 156645, 156652, 1566591, 1566611, 156668, H01L 2100

Patent

active

052098150

ABSTRACT:
A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.

REFERENCES:
patent: 4004044 (1977-01-01), Franco
patent: 4410622 (1983-10-01), Dalal
patent: 4465538 (1984-08-01), Schmoock
patent: 4803181 (1989-02-01), Buchmann
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4861732 (1989-08-01), Fujimura
patent: 4869760 (1989-09-01), Matsunami
patent: 4886728 (1989-12-01), Salamy
patent: 5013397 (1991-05-01), Tsukakoshi
patent: 5037504 (1991-08-01), Takeuchi
patent: 5073230 (1991-12-01), Maracas et al.
IBM Technical Disclosure Bulletin, vol. 19 No. 4, Sep. 1976, "Stripping Promotor for Lift-off Mask", by P. Carr et al.

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