Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-08-23
2005-08-23
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S695000, C438S696000, C438S725000, C438S732000, C438S735000, C438S742000, C438S743000, C438S744000, C438S909000, C438S952000, C430S313000, C430S314000, C216S049000, C216S067000, C216S079000, C216S080000
Reexamination Certificate
active
06933236
ABSTRACT:
A method for forming a photoresist pattern with minimally reduced transformations through the use of ArF photolithography, including the steps of: forming an organic anti-reflective coating layer on a an etch-target layer already formed on a substrate; coating a photoresist for ArF on the organic anti-reflective coating layer; exposing the photoresist with ArF laser; forming a first photoresist pattern by developing the photoresist, wherein portions of the organic anti-reflective coating layer are revealed; etching the organic anti-reflective coating layer with the first photoresist pattern as an etch mask and forming a second photoresist pattern by attaching polymer to the first photoresist pattern, wherein the polymer is generated during etching the organic anti-reflection coating layer with an etchant including O2plasma; and etching the etch-target layer by using the second photoresist pattern as an etch mask.
REFERENCES:
patent: 5910453 (1999-06-01), Gupta et al.
patent: 6316349 (2001-11-01), Kim et al.
patent: 6376384 (2002-04-01), Yen et al.
patent: 6569778 (2003-05-01), Lee et al.
patent: 6774043 (2004-08-01), Yamaguchi et al.
patent: 2002-075975 (2002-03-01), None
Rossnagel et al., Handbook of Plasma Processing Technology, 1990, Noyes Publications, pp. 17-20, 198, 209.
Wolf et al., Silicon Processing for the VLSI Era, Lattice Press, 1986, vol. 1, pp. 182-183.
Kim Sang-Ik
Lee Sung-Kwon
Suh Weon-Joon
Chen Eric B.
Hynix / Semiconductor Inc.
Norton Nadine G.
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