Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-08
2008-01-08
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S354000, C257SE27116, C257SE29151, C257SE29273, C257SE21535, C257SE21412, C257SE21413, C438S153000, C438S154000, C438S164000
Reexamination Certificate
active
07317227
ABSTRACT:
A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF4and O2is used, and suitably, a gas ratio of CF4and O2in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.
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Hayashi Ken-ichi
Hirano Naoto
Shiraishi Hitoshi
Yamamoto Atsushi
Fourson George R.
Maldonado Julio J.
McGinn IP Law Group PLLC
NEC Corporation
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