Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-07-26
2011-07-26
Loke, Steven (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Combined with the removal of material by nonchemical means
C438S149000, C438S158000, C257SE21411
Reexamination Certificate
active
07985694
ABSTRACT:
A method for forming a pattern includes the step of forming an electrically conductive film by applying a liquid composition onto a first plate. The liquid composition includes an organic solvent and conductive particles surface-modified with a fatty acid or an aliphatic amine. Then, a second pattern, which is a reverse pattern of a first pattern, is formed on the first plate by pressing a second plate having a concave-convex pattern on a surface thereof on a surface of the first plate having the electrically conductive film on the surface thereof. Then, the first pattern of the electrically conductive film is transferred onto convex top faces of the second plate. Then, the second pattern is transferred onto a surface of a transfer substrate by pressing the surface of the first plate having the second pattern thereon on the surface of the transfer substrate.
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Japanese Patent Office Action corresponding to Japanese Serial No. JP2007-106864 dated Sep. 15, 2009.
Fukuda Toshio
Nomoto Akhiro
Nomoto Kazumasa
Loke Steven
SNR Denton US LLP
Sony Corporation
Whalen Daniel
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