Method for forming pattern in semiconductor device

Details Method for forming pattern in semiconductor device Method for forming pattern in semiconductor device

2007-04-24

2010-12-14

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S299000, C438S618000, C438S672000, C438S736000, C257SE21645

Reexamination Certificate

active

07851364

ABSTRACT:
A method for forming a pattern in a semiconductor device includes forming an etch target layer comprising metal over a substrate. A hard mask pattern is formed over the etch target layer. The etch target layer is etched to form a pattern such that a line width of the etch target layer is smaller than a line width of the hard mask pattern.

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