Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-07-01
1999-01-05
Chapman, Mark
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430 5, 430 30, 430327, G03C 500
Patent
active
058560696
ABSTRACT:
The composition of a resist material is determined so that the film thinning quantity of the resist pattern is increased when the profile of a resist pattern which is formed in advance tends to be a T-top profile as compared with a reference pattern profile but so that the film thinning quantity of the resist pattern is decreased when the profile of the resist pattern which is formed in advance tends to be a round-shoulder profile as compared with the reference pattern profile. After coating a semiconductor substrate at its top with the resist material whose composition is determined as such to thereby form a resist film, the resist film is exposed through a mask. The exposed resist film is developed, whereby a resist pattern is obtained.
REFERENCES:
patent: 4857435 (1989-08-01), Hopf et al.
patent: 5164278 (1992-11-01), Brunsvold et al.
O. Nalamasu et al., "Preliminary Lithographic Characteristics of an All-organic Chemically Amplified Resist Formulation for Single Layer Deep-UV Lithography", 1991, pp. 13-25, Proc. of SPIE vol. 1466 Advances in Rsist Technology and Processing VIII (1991).
Endo Masayuki
Katsuyama Akiko
Chapman Mark
Matsushita Electric - Industrial Co., Ltd.
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