Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-28
2010-06-01
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S421000, C438S422000, C257SE21130, C257SE21564
Reexamination Certificate
active
07727878
ABSTRACT:
A method for forming a passivation layer is disclosed. In the method, a substrate containing a top surface and a bottom surface opposite to the top surface is first provided, wherein a plurality of conductive pads are disposed on the top surface thereof. Thereafter, a first passivation layer is formed on the top surface of the substrate, wherein the first passivation layer has a characteristic of photoresist. A first exposure/develop step is then performed to form a plurality of first openings in the first passivation layer, wherein the conductive pads are exposed through the first openings. Then, a second passivation layer is formed on the first passivation layer, wherein the second passivation layer has a characteristic of photoresist. A second exposure/develop step is then performed to form a plurality of second openings in the second passivation layer, wherein the conductive pads are exposed through the second openings.
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English language translation of abstract of TW 229436.
English language translation of abstract of TW 222710.
English language translation of abstract of TW 529118.
Ho Tsung-Chieh
Lu Hsing-Fu
Su Cheng-Hsueh
Wu Shyh-Ing
Advanced Semiconductor Engineering Inc.
Nguyen Thanh
Thomas Kayden Horstemeyer & Risley
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