Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Menz, Douglas M. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S763000, C438S778000
Reexamination Certificate
active
11018698
ABSTRACT:
Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first passivation film on the metal wires, wherein the buffer oxide film can mitigate damage by plasma, forming a high density plasma film being a second passivation film on the buffer oxide film, and forming a third passivation film on the second passivation film. According to the present invention, it is possible to significantly reduce the leakage current between a select source line and a common source line.
REFERENCES:
patent: 6228780 (2001-05-01), Kuo et al.
patent: 6391795 (2002-05-01), Catabay et al.
patent: 2002/0102779 (2002-08-01), Yang
Official action issued in corresponding Taiwanese application No. 93138751 filed Dec. 14, 2004.
Offical action for Chinese patent Application No. 200510005526.X, received Feb. 7, 2007.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Menz Douglas M.
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