Metal treatment – Compositions – Heat treating
Patent
1978-08-09
1979-04-03
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148177, 148178, 148188, 136 89TF, 219121L, 357 30, 357 91, H01L 2126, H01L 21268
Patent
active
041475631
ABSTRACT:
This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.
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Narayan Jagdish
Young Rosa T.
Carlson Dean E.
Hamel Stephen D.
Lewis Fred O.
Roy Upendra
Rutledge L. Dewayne
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