Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-06-04
2000-05-23
Nelms, David
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438770, 438773, H01L 2131
Patent
active
060665769
ABSTRACT:
Field oxide is formed using high pressure. Oxidation of field regions between active regions is accomplished in a two-step process. A first oxide layer is formed in the field region. Then, a second oxide layer is formed on the first oxide layer. The second oxide layer is formed at a pressure of at least approximately 5 atmospheres. In one embodiment, the first oxide layer is formed at atmospheric pressure using a conventional oxidation technique, such as rapid thermal oxidation (RTO), wet oxidation, or dry oxidation. In another embodiment, the first oxide layer is formed at near atmospheric pressure, at a pressure of approximately 1 to 5 atmospheres. Wet or dry oxidation is used for the oxidizing ambient. The first oxide layer is formed to a thickness of approximately 500 angstroms or less, and typically greater than 200 angstroms. Temperatures of approximately 600 to 1,100 degrees Celsius are used for the oxidation steps.
REFERENCES:
patent: 4742016 (1988-05-01), Rhodes
patent: 5118641 (1992-06-01), Roberts
patent: 5266509 (1993-11-01), Chen
patent: 5304829 (1994-04-01), Mori et al.
patent: 5358894 (1994-10-01), Fazan et al.
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5502009 (1996-03-01), Lin
patent: 5597749 (1997-01-01), Iguchi
patent: 5846888 (1998-12-01), Chapek et al.
Chapek David L.
Thakur Randhir P. S.
Berry Renee R.
Micro)n Technology, Inc.
Nelms David
LandOfFree
Method for forming oxide using high pressure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming oxide using high pressure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming oxide using high pressure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1836881