Method for forming oxide protective film on bonding pads of semi

Details Method for forming oxide protective film on bonding pads of semi Method for forming oxide protective film on bonding pads of semi

1995-07-24

1997-01-21

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437182, 437187, 437188, H01L 2144

Patent

active

055959342

ABSTRACT:
A method for forming a protective oxide film on the bonding pads of a semiconductor chip which is to be encapsulated by a molded-in-place capsule of plastic material including exposing a chip having bonding pads (while the chip is in the form of wafer), to O.sub.3 and ultraviolet (UV) radiation, so that excited oxygen generated from the O.sub.3 by UV radiation oxidizes metal atoms, for example aluminum atom of the aluminum bonding pads, to form a fine oxide film over the bonding pads, this film providing protection from water and/or ions which would otherwise cause corrosion of the bonding pads.

REFERENCES:
patent: 5134093 (1992-07-01), Onishi et al.
patent: 5213996 (1993-05-01), Ogawa
patent: 5330935 (1994-07-01), Dobuzinsky et al.
patent: 5334544 (1994-08-01), Matsuoka et al.
patent: 5338393 (1994-08-01), Burmer
ISTFA'93: the 19th, International Symposium for Testing & Failure Analysis, USA/15-19 Nov. 1993, Improvement of Moisture resistance by the New Surface Treatment of Aluminum Bonding Pads in LSI, T. Miyakawa et al, pp. 331-334.

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