Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Including heating
Reexamination Certificate
2005-04-13
2010-10-05
Chea, Thorl (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Including heating
C430S311000, C430S313000, C430S314000, C430S322000, C430S326000, C216S058000, C216S083000
Reexamination Certificate
active
07807341
ABSTRACT:
A method for forming an organic mask, includes:permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the organic pattern with the organic solvent; andthereby, partially or entirely decreasing original adhesion strength between the base film and the organic pattern. A heat treatment may be conducted after contacting to adjust the adhesion strength. Using the organic pattern as a mask, isotropic etching is conducted. As a result, a desired taper angle of the etched base film can be achieved with high accuracy. The taper angle of the etched base film is adjustable by controlling the adhesion strength through the heat treatment.
REFERENCES:
patent: 4133907 (1979-01-01), Brewer
patent: 5683857 (1997-11-01), Shirai et al.
patent: 6380006 (2002-04-01), Kido
patent: 2002/0146911 (2002-10-01), Muranaka et al.
patent: 2003/0186170 (2003-10-01), Yamashita
patent: 06-332196 (1994-12-01), None
patent: 7-7757 (1995-01-01), None
patent: 8-195505 (1996-07-01), None
patent: 09- 279367 (1997-10-01), None
patent: 3157634 (2001-02-01), None
patent: 2002-083765 (2002-03-01), None
patent: 2002-231603 (2002-08-01), None
patent: 2003-86493 (2003-03-01), None
patent: 2003-282422 (2003-10-01), None
Japanese Patent Office issued a Japanese Office Action, Application No. 2004-119679.
Chea Thorl
NEC LCD Technologies Ltd.
Young & Thompson
LandOfFree
Method for forming organic mask and method for forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming organic mask and method for forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming organic mask and method for forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4160610