Method for forming ordered titanium nitride and titanium silicid

Details Method for forming ordered titanium nitride and titanium silicid Method for forming ordered titanium nitride and titanium silicid

1995-01-31

1997-03-18

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437200, H01L 2128

Patent

active

056122535

ABSTRACT:
An improved method is provided for fabricating a metallization structure upon a semiconductor wafer. The method performs nitridation upon a sputter-deposited Ti layer over junction regions prior to silicidation thereof. Further, nitridation and silicidation are each performed at controlled amounts within the Ti layer overlying field dielectric regions, also included in the semiconductor wafer. Nitridation and silicidation thereby occur during a three-step anneal process of a previously deposited Ti layer. The three anneal steps are carried forward at separate and distinct temperatures, wherein the first anneal temperature is followed by a second, higher anneal temperature, and wherein the second anneal cycle is followed by a third anneal cycle of higher temperature than the first or second anneal temperatures. The resulting TiN/Ti/TiSi.sub.2 tri-layer is optimized having the thickest possible TiN film over the junctions and dielectric regions, and further having excellant adherence of the TiN film to the dielectric.

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