Test structure for dielectric film evaluation

Details Test structure for dielectric film evaluation Test structure for dielectric film evaluation

1996-04-10

1998-11-24

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, H01L 29788, H01L 2976, H01L 2994, H01L 31062

Patent

active

058411640

ABSTRACT:
It is an object to obtain evaluation results with a dielectric film evaluating test structure which are close to those with an actual device. Gate electrodes (6A) are provided in a dielectric film evaluating test structure. In the gate electrodes 6A, openings (20) are formed on a gate insulator film (5) by etching, or the like.

REFERENCES:
patent: 4753898 (1988-06-01), Parrillo et al.
patent: 5250823 (1993-10-01), Veendrick et al.
patent: 5466956 (1995-11-01), Aeba
patent: 5543633 (1996-08-01), Losavio et al.
patent: 5638003 (1997-06-01), Hall

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