Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-05-31
2005-05-31
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S694000, C438S700000, C438S703000, C438S761000, C438S778000
Reexamination Certificate
active
06900134
ABSTRACT:
A method and system is disclosed for selectively forming a pattern for making openings in a substrate. A first set of openings are formed in a first photoresist layer coated on the substrate using a first mask. A developing bottom antireflective coating (BARC) layer is then formed over the first photoresist with the openings filled therewith. A second photoresist layer is formed over the BARC layer. A second set of openings are formed in the second photoresist layer using a second mask exposing the BARC layer directly underneath. The exposed part of the BARC layer is then removed. Subsequently, one or more openings of the first set in the first photoresist layer, after the exposed part of the BARC layer filled therein is removed, are used for forming the openings in the substrate.
REFERENCES:
patent: 6127259 (2000-10-01), Shields et al.
patent: 6258676 (2001-07-01), Lee et al.
patent: 6282248 (2001-08-01), Farrow et al.
patent: 6458705 (2002-10-01), Hung et al.
patent: 6680252 (2004-01-01), Chen et al.
patent: 6713402 (2004-03-01), Smith et al.
patent: 6815331 (2004-11-01), Lee et al.
Chen Jian-Hong
Ho Bang-Chein
Shih Jen-Chieh
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
Tran Thanh Y.
Zarabian Amir
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