Method for forming of a silicon oxide layer on a topography

Details Method for forming of a silicon oxide layer on a topography Method for forming of a silicon oxide layer on a topography

1996-12-20

1998-07-14

Cameron, Erma

Coating processes

Heat decomposition of applied coating or base material

427387, 427379, B05D 302

Patent

active

057801037

ABSTRACT:
A method for depositing an SiO.sub.2 layer, which acts as an inter-metal dielectric (IMD), is provided. The method includes the steps of applying to the topography an organodisiloxane which is dissolved in an organic solvent, the organodisiloxane is then polymerized, and the polymer formed is decomposed, the polymer changing in the process to become an SiO.sub.2 -rich layer. The method of the present invention results in SiO.sub.2 layers which achieve an excellent local and global degree of planarization and have a distinctly lower dielectric constant than SiO.sub.2 layers prepared using conventional methods.

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