Method for forming narrow structures in a semiconductor device

Details Method for forming narrow structures in a semiconductor device Method for forming narrow structures in a semiconductor device

2011-04-19

2011-04-19

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S424000, C438S629000, C438S706000, C257S347000, C257S507000, C257SE21038, C257SE21235

Reexamination Certificate

active

07928005

ABSTRACT:
A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered by the spacers or the mask. The method may further include depositing a material over the semiconductor device, removing the mask and etching the conductive layer to remove portions of the conductive layer not covered by the spacers or the material, where remaining portions of the conductive layer form the conductive structures.

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PCT Search Report and Written Opinion, Jan. 23, 2007, 10 pages.

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