Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1983-09-27
1985-10-08
Downey, Mary F.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430323, 430324, 430325, 430328, 430330, G03C 500, G03F 726
Patent
active
045460663
ABSTRACT:
A method for providing very narrow resolvable line widths on a semiconductor substrate surface involves initial overexposure of a positive working photoresist through a mask so as to not only expose the portions of the photoresist corresponding to the transparent areas of the mask but to also expose the outer periphery of the photoresist areas corresponding to the opaque areas of the mask. Through subsequent processing, the areas of the substrate surface corresponding to the originally unexposed areas of the photoresist are made available for use in semiconductor fabrication, such as areas to be oxidized to function as narrow electrical isolation areas.
REFERENCES:
patent: 4022932 (1977-05-01), Feng
patent: 4104070 (1978-08-01), Moritz et al.
patent: 4231811 (1980-11-01), Somekh et al.
patent: 4318759 (1982-03-01), Trenary et al.
patent: 4508813 (1985-04-01), Nakagawa
Hamel et al., IBM Technical Disclosure Bulletin, vol. 24, No. 10, Mar. 1982, p. 5063.
Hamel et al., IBM Technical Disclosure Bulletin, vol. 23, No. 5, Oct. 1980, p. 1839.
Field Cheryl B.
Lange Russell C.
Dees Jos,e G.
Downey Mary F.
International Business Machines - Corporation
LandOfFree
Method for forming narrow images on semiconductor substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming narrow images on semiconductor substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming narrow images on semiconductor substrates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2219992