Method for forming nanotube semiconductor devices

Details Method for forming nanotube semiconductor devices Method for forming nanotube semiconductor devices

2011-03-22

2011-03-22

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S246000, C438S389000, C438S510000, C438S692000, C257SE21042, C257SE21388, C257SE21051, C257SE21077, C257SE21267, C257SE21304, C257SE21435, C257SE21545, C257SE21546, C257SE21562

Reexamination Certificate

active

07910486

ABSTRACT:
A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer has uniform doping concentration. In another embodiment, a first thin epitaxial layer of the same conductivity type as the semiconductor body is formed on the sidewall of a trench in the semiconductor body and a second thin epitaxial layer of the opposite conductivity type is formed on the first epitaxial layer. The first and second epitaxial layers have uniform doping concentration. The thickness and doping concentrations of the first and second epitaxial layers and the semiconductor body are selected to achieve charge balance. In one embodiment, the semiconductor body is a lightly doped P-type substrate. A vertical trench MOSFET, an IGBT, a Schottky diode and a P-N junction diode can be formed using the same N-Epi/P-Epi nanotube structure.

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