Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2005-11-07
2009-12-15
Olsen, Allan (Department: 1792)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S033000, C216S041000, C216S052000, C257SE21038
Reexamination Certificate
active
07632417
ABSTRACT:
Provided is a method of forming a nanostructure having a nano-sized diameter and a high aspect ratio through a simple and economical process. To form the nanostructure, a polymer thin film is formed on a substrate and a mold is brought to contact the polymer thin film. Then, a polymer patterning is formed to contact the background surface of an engraved part of the mold, and then the polymer pattern is extended out by removing the mold out of the polymer thin film. The nanostructure forming method of the present research can reproduce diverse cilia optimized in the natural world. Also, it can be used to develop new materials with an ultra-hydrophobic property or a high adhesiveness. Further, it can be applied to a nanopattern forming process for miniaturizing electronic devices and to various ultra-precise industrial technologies together with carbon nanotube, which stands in the highlight recently.
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Jeong Hoon-Eui
Suh Kahp-Yang
Bame James E.
IPLA P.A.
Olsen Allan
Seoul National University Industry Foundation
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