Method for forming nanometer-sized silicon quantum dots

Details Method for forming nanometer-sized silicon quantum dots Method for forming nanometer-sized silicon quantum dots

1999-11-16

2001-05-22

Bowers, Charles (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S255000, C438S398000, C438S665000, C438S947000, C438S962000, C117S097000

Reexamination Certificate

active

06235618

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a method for forming nanometer-sized silicon quantum dots; and, more particularly, to a method for forming electronically separated and nanometer-sized silicon quantum dots on a silicon substrate covered with a silicon nitride thin film by using a surface chemical reaction technique.
DESCRIPTION OF THE PRIOR ART
Recently, there is a demand for the miniaturization of a semiconductor device and it is necessary to improve on a nanostructural technology to achieve low cost, high efficiency and high purity. A conventional method for forming nanometer-sized silicon quantum dots is using high-energy electron beams for patterning. However, it is expensive and takes long processing time to make silicon quantum dots by using high-energy electron beams.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide a method for forming electrically separated and highly pure silicon quantum dots on a silicon substrate covered with a silicon nitride thin film by using surface chemical reaction technique to minimize problems caused by the conventional method.
In accordance with an aspect of the present invention, there is provided a method for forming silicon quantum dots by using uniformly sized and distributed nanometer-sized silicon nitride islands as a mask against an oxygen gas, under vacuum conditions to eliminate any impurities in all processes. First, using low energy nitrogen ion beams, a silicon nitride thin film is formed. On the top of the silicon nitride thin film, silicon thin film in few nanometer thick is formed by using a silicon vapor deposition technique. Then the surface of the silicon substrate is reacted with a nitrogen gas to form silicon nitride islands, few to tens of nanometer in size and single-layered in thickness, while maintaining the surface at about 800° C. Since silicon nitride is not reactive with an oxygen gas, the silicon nitride islands are used as a mask against an oxygen gas. The surface of the silicon substrate is heated to 700° C. and the oxygen gas is injected to etch the silicon thin film selectively, not the portion covered with the silicon nitride islands. Therefore, the silicon quantum dots in thin film thickness can be formed by using the surface chemical reaction technique.


REFERENCES:
patent: 6037243 (2000-03-01), Ha et al.

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