Method for forming monocrystalline semiconductor film on insulat

Details Method for forming monocrystalline semiconductor film on insulat Method for forming monocrystalline semiconductor film on insulat

1982-11-29

1985-02-19

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG65, C30B 104

Patent

active

045003882

ABSTRACT:
A monocrystalline semiconductor film is formed on an insulating film first by selectively forming at least one insulating film which has sides substantially perpendicular to <100> or <211>-axes, contiguous to a cubic crystal system monocrystalline semiconductor substrate. An amorphous film of a cubic crystal system semiconductor material is formed to cover an exposed surface of substrate and the insulating film. The amorphous semiconductor film is annealed under a condition such that the amorphous film is grown from the substrate by solid-phase epitaxial growth, thereby converting the amorphous film to a monocrystalline semiconductor film having a crystal lattice continuous to that of the substrate.

REFERENCES:
patent: 4147584 (1979-04-01), Garrison et al.
patent: 4383883 (1983-05-01), Mizutani

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