Method for forming micro patterns of semiconductor devices

Details Method for forming micro patterns of semiconductor devices Method for forming micro patterns of semiconductor devices

1996-11-22

1999-05-11

Grumbling, Matthew V.

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask is multilayer resist

216 74, 216 49, 216 13, 1566311, 1566401, 1566381, 1566621, G03C5/00

Patent

active

059024933

ABSTRACT:
A method for forming accurate micro patterns having a micro dimension smaller than the resolution of a stepper used on a semiconductor substrate, thereby achieving an improvement in the integration degree of the semiconductor device which is ultimately produced. The method includes the steps of coating an under photoresist film over an etchable layer, laminating first and second intermediate films over the under photoresist film, forming patterns of the second intermediate film by use of a first light exposure mask having light shield patterns corresponding to those selected in an interlaced manner from micro patterns to be formed, namely, every second one of adjacent micro patterns, forming patterns of the first intermediate film by use of a second light exposure mask having light shield patterns corresponding to the remaining micro patterns, and patterning the under photoresist film while using the first and second-intermediate film patterns as a mask, thereby obtaining under photoresist film patterns having micro space and line widths.

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patent: 5632908 (1997-05-01), Shahid
patent: 5688365 (1997-11-01), Ogoshi
patent: 5738757 (1998-04-01), Burns et al.

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