Method for forming metallic materials comprising...

Details Method for forming metallic materials comprising... Method for forming metallic materials comprising...

2011-07-05

2011-07-05

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S655000, C438S754000

Reexamination Certificate

active

07972911

ABSTRACT:
The method for forming first and second metal-based materials comprises providing a substrate comprising an area made from a first semi-conductor material and an area made from a second semi-conductor material comprising germanium separated by a pattern made from dielectric material, depositing a metal layer and performing a first heat treatment in an atmosphere comprising a quantity of oxygen comprised between 0.01% and 5%. The metal layer reacts with the first semi-conductor material and the second semi-conductor material comprising germanium to respectively form the first metal-based material and the second metal-based material containing germanium.

REFERENCES:
patent: 5288666 (1994-02-01), Lee
patent: 6150248 (2000-11-01), Sekiguchi et al.
patent: 2003/0162349 (2003-08-01), Wieczorek et al.
patent: 2005/0136584 (2005-06-01), Boyanov et al.
patent: 2007/0032025 (2007-02-01), Brunco et al.
patent: 2009/0004850 (2009-01-01), Ganguli et al.
patent: 2010/0258857 (2010-10-01), Ramaswamy et al.

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