Method for forming metallic layer using inspected mask

Details Method for forming metallic layer using inspected mask Method for forming metallic layer using inspected mask

1998-04-21

2000-11-07

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

216 12, 216102, 216105, 430313, 430314, 430318, 438661, 438663, 438669, 438632, 438636, 438687, 438688, 438725, H01L 2144, H01L 214763, B44C 122, G03C 500

Patent

active

061436526

ABSTRACT:
A method for forming a high-quality aluminum-copper alloy pattern over a semiconductor substrate. The method first forms an aluminum-copper alloy layer over a semiconductor substrate, and then performs a rapid thermal processing operation to remelt copper extracts into the alloy bulk. Subsequently, a photoresist layer is formed over the alloy layer. Finally, the alloy layer is etched to transfer the pattern from the photoresist layer to the metallic alloy layer. Unlike a conventional method that can lead to abnormal conduction due to the presence of extracts that are difficult to etch, this invention uses a thermal operation to remove the extracts before etching is conducted. Hence, the masking effect due to etching is mostly prevented.

REFERENCES:
patent: 5750439 (1998-05-01), Naito
patent: 5759868 (1998-06-01), Ogawa et al.
patent: 5895265 (1999-04-01), Inoue et al.
Webster's II dictionary, published by Houghton Mifflin Company, 1995.

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