Method for forming metal wirings of semiconductor device

Details Method for forming metal wirings of semiconductor device Method for forming metal wirings of semiconductor device

2004-12-30

2008-03-11

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000

Reexamination Certificate

active

07341940

ABSTRACT:
A method of forming metal wirings for a semiconductor device. A first etch stop layer, an dielectric layer, a second etch stop layer, and a wiring layer are deposited on a semiconductor substrate. A hole is formed by etching the wiring layer, the first etch stop layer, and the dielectric layer. A trench is formed by etching the wiring layer. The exposed first and second etch stop layers are removed after removal of the trench pattern. A barrier metal layer is deposited on inner walls of the hole and the trench. Grooves are formed on the barrier metal layer. A metal seed layer is deposited on the barrier metal layer. A metal thin layer is deposited inside the hole and the trench. The metal thin layer, the metal seed layer, and the barrier metal layer on the wiring layer are removed.

REFERENCES:
patent: 6652718 (2003-11-01), D'Couto et al.
patent: 6713402 (2004-03-01), Smith et al.
patent: 7088003 (2006-08-01), Gates et al.
patent: 2004/0229462 (2004-11-01), Gracias et al.

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