Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-07
2006-03-07
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S636000, C438S688000, C438S736000
Reexamination Certificate
active
07008869
ABSTRACT:
A bridge phenomenon between metal wirings is prevented by removing metal by-products created during a metal wiring etching process. A semiconductor substrate is formed with an insulation layer having a conductive plug. A metal layer including first Ti/TiN layer, an Al layer, and a second Ti/TiN layer is formed on an entire surface of the semiconductor substrate. A hard mask layer is formed on the metal layer. A photosensitive film pattern is formed the hard mask layer and the hard mask layer is primarily etched by using the photosensitive film pattern as a mask. The metal layer is etched by using the photosensitive film pattern and the etched hard mask layer as an etching mask.
REFERENCES:
patent: 5631197 (1997-05-01), Yu et al.
patent: 6025273 (2000-02-01), Chen et al.
patent: 6159863 (2000-12-01), Chen et al.
patent: 6277752 (2001-08-01), Chen
patent: 6306771 (2001-10-01), Syau et al.
patent: 6492276 (2002-12-01), Huang
patent: 6573189 (2003-06-01), Lin et al.
Chen Jack
Hynix / Semiconductor Inc.
Ladas & Parry LLP
LandOfFree
Method for forming metal wiring without metal byproducts... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming metal wiring without metal byproducts..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming metal wiring without metal byproducts... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3578160