Method for forming metal wiring of semiconductor device and...

Details Method for forming metal wiring of semiconductor device and... Method for forming metal wiring of semiconductor device and...

2007-06-18

2010-10-26

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S626000, C438S629000, C438S675000

Reexamination Certificate

active

07820544

ABSTRACT:
A method for forming a metal wiring of a semiconductor device, includes forming a first metal layer on a wafer, partially etching a portion of the first metal layer where a metal wiring is to be formed, sequentially forming a first copper barrier layer, a copper seed layer, and a copper layer on the first metal layer, annealing the copper layer, polishing the resulting structure until the first metal layer is exposed, patterning the first metal layer and the first copper barrier layer to form a portion of a metal wiring, forming a second copper barrier layer, forming a second metal layer, and patterning the second metal layer and the second copper barrier layer to form the metal wiring.

REFERENCES:
patent: 7432192 (2008-10-01), Feng et al.
patent: 2002/0146901 (2002-10-01), Morozumi
patent: 2005/0029669 (2005-02-01), Inoue et al.
patent: 2007/0082479 (2007-04-01), Padhi et al.

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