Method for forming metal wiring of semiconductor device

Details Method for forming metal wiring of semiconductor device Method for forming metal wiring of semiconductor device

2006-12-12

2006-12-12

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C257SE21584

Reexamination Certificate

active

07148139

ABSTRACT:
A method for forming a metal wiring of a semiconductor includes forming an inter metal dielectric layer on a semiconductor substrate having a predetermined low structure with a conductive layer. A plurality of contact holes is formed to expose the conductive layer through the inter metal dielectric layer. A first titanium nitride layer is formed on sidewalls of the contact holes. The first titanium nitride layer is plasma processed. A first titanium silicon nitride layer is formed on the first titanium nitride layer. Metal plugs are formed on the first titanium silicon nitride layer. The metal plugs, the first titanium silicon nitride layer, and the first titanium nitride layer are polished to expose the inter metal dielectric layer. Metal wirings are formed to cover the contact holes.

REFERENCES:
patent: 6077780 (2000-06-01), Dubin
patent: 6214731 (2001-04-01), Nogami et al.
patent: 6271136 (2001-08-01), Shue et al.
patent: 6475912 (2002-11-01), Harada

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