Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-06
2007-03-06
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S161000, C257SE21158, C257SE21477
Reexamination Certificate
active
10923372
ABSTRACT:
A method for producing a field effect transistor having source/drain electrodes of metal single-layer film firmly adhering to the gate insulating film is provided. The method includes forming a gate electrode on a support, forming a gate insulating film on the support and the gate electrode, performing treatment with a silane coupling agent on the surface of the gate insulating film, forming source/drain electrodes of metal single-layer film on the gate insulating film which has been treated with a silane coupling agent, and forming a channel-forming region of semiconductor layer on the gate insulating film held between the source/drain electrodes.
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Bell Boyd & Lloyd LLP
Sarkar Asok Kumar
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