Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-09-04
1998-07-07
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438639, 438645, 438656, 438691, H01L 2144
Patent
active
057768331
ABSTRACT:
A method for forming a metal plug is provided. The method includes: a) forming a metal contact window in a substrate having an oxide layer; b) forming a barrier layer over a top surface of the oxide layer and a wall defining the metal contact window; c) forming a metal layer covering the barrier layer and filling up the metal contact window; d) removing a portion of the metal layer located above the barrier layer covering the top surface of the oxide layer by a chemical mechanical polishing method; and e) removing the barrier layer covering the top surface of the oxide layer by an etching method.
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Chen Hsi-Chieh
Shiue Yeong-Ruey
Wang Pei-Jan
Yi Champion
Bowers Jr. Charles L.
Gurley Lynne A.
Mosel Vitelic Inc.
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