Method for forming metal pattern to reduce contact...

Details Method for forming metal pattern to reduce contact... Method for forming metal pattern to reduce contact...

2007-09-18

2007-09-18

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S639000, C438S652000, C438S675000

Reexamination Certificate

active

11024467

ABSTRACT:
A method for forming a metal pattern in a semiconductor device which is capable of reducing contact resistivity with an interconnection contact. The method includes forming a tungsten interconnection contact passing through a lower insulating layer on a semiconductor substrate, forming an upper insulating layer covering the interconnection contact, and forming a groove having the same line width as a damascene trench on the upper insulating layer. The method also includes forming a mask spacer on a sidewall of the groove, forming the damascene trench having an inclined bottom profile for exposing a top surface and a portion of a sidewall of the interconnection contact, and forming a metal pattern with which the damascene trench is filled, the metal pattern electrically connected to the interconnection contact.

REFERENCES:
patent: 5904559 (1999-05-01), Yu
patent: 6228763 (2001-05-01), Lee
patent: 6475904 (2002-11-01), Okoroanyanwu et al.
patent: 6893541 (2005-05-01), Chiang et al.
patent: 2000-174117 (2000-06-01), None

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