Method for forming metal lines of semiconductor devices

Details Method for forming metal lines of semiconductor devices Method for forming metal lines of semiconductor devices

1997-09-22

1999-11-16

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438632, 438656, 438687, 438688, H01L 2128

Patent

active

059857587

ABSTRACT:
A method for forming metal lines of a semiconductor device, which is capable of eliminating a problem in the planarization caused by the chemical vapor deposition method, namely, the formation of a thin film having a rough surface, an increase in the impurity concentration and an influence on an under layer. The method includes the steps of depositing an anti-diffusion metal layer over a structure formed with a metal contact, depositing a metal layer such as a copper film or aluminum film over the anti-diffusion metal layer in accordance with a physical vapor deposition method, annealing the resulting structure in a chamber maintained at a high temperature and high vacuum without losing the vacuum, thereby planarizing the structure. The method further includes forming an anti-reflection film over the metal layer, patterning the anti-reflection film, the metal layer and the first anti-diffusion film, thereby forming an anti-reflection film pattern, a metal layer pattern, and a first anti-diffusion film pattern that form a line; and forming a second anti-diffusion film on an exposed surface of the anti-reflection film pattern, the metal and the first anti-diffusion film pattern.

REFERENCES:
patent: 4988423 (1991-01-01), Yamamoto et al.
patent: 5266521 (1993-11-01), Lee et al.
patent: 5412250 (1995-05-01), Brugge
patent: 5447599 (1995-09-01), Li et al.
patent: 5572071 (1996-11-01), Lee
patent: 5670420 (1997-09-01), Choi

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