Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
1999-06-30
2001-07-10
Utech, Benjamin L. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S720000, C438S725000, C438S733000, C438S742000
Reexamination Certificate
active
06258725
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to semiconductor manufacturing, and more particularly, to a method for forming metal line of highly integrated semiconductor devices.
As a density of an integrated semiconductor device increases, a width of a pattern and a space between patterns become smaller. Since it needs to use a shorter wavelength for forming patterns having a narrow space in lightening process, the wavelength of a stepper is getting shorter and a deep ultraviolet wavelength (DUV) light become to be used.
According to using a shorter light such as DUV, a TiN anti-reflective coating layer which is over a metal line, doesn't effectively prevent the metal line from reflecting. Thus, since diffused reflection may be occurred during lightening, it is difficult that a resulting metal line pattern is not finely and accurately formed. To solve the diffused reflection, a oxynitride has been formed on the TiN layer, or an anti-reflective coating layer has been made from aluminum nitride. However, in the former method, the number of process steps is increased and it is not easy to make via contact hole for connecting an interlayer metal, and the resistance height of a metal line is increased. Also, the latter method has a problem that the anti-reflective coating layer must be removed in a following process and the metal line with aluminum nitride on top has electromigration resistance.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a method for forming a metal line of a semiconductor device, in which a (TiAl)N anti-reflective coating layer is used for effectively preventing a metal line from reflecting and exactly forming a fine metal line pattern in lightening process by using a shorter wavelength such as DUV.
In accordance with the object of the present invention, there is provided a method for forming metal line of an integrated semiconductor device, comprising the steps of: forming a metal layer on a semiconductor substrate; forming an anti-reflective coating layer comprising (TiAl)N on the metal layer; forming a photosensitive layer pattern on the anti-reflective coating layer; selectively etching the (TiAl)N anti-reflective coating layer and the metal layer so as to form the metal line; and removing the photosensitive layer pattern.
The present invention is characterized in forming a fine metal line by using a (TiAl)N anti-reflective coating layer which has a low reflectivity and permeability
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Kim Young Jung
Lee Sang Hyeob
Blakely & Sokoloff, Taylor & Zafman
Tran Binh X.
Utech Benjamin L.
Yundai Electronics Industries Co., Ltd.
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