Method for forming metal line of semiconductor device

Details Method for forming metal line of semiconductor device Method for forming metal line of semiconductor device

2005-12-30

2010-02-16

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21585

Reexamination Certificate

active

07662714

ABSTRACT:
A method for forming a metal line of a semiconductor device uses a low dielectric constant material as an interlayer dielectric layer and treats a surface of the interlayer dielectric layer with plasma to prevent moisture and ammonia from being adsorbed in the low dielectric constant material. The method for forming a metal line of a semiconductor device includes forming a lower metal line layer on a semiconductor substrate, sequentially forming an etch stop layer and an interlayer dielectric layer on an entire surface including the lower metal line layer, forming a plasma layer by treating a surface of the interlayer dielectric layer with plasma, forming a photoresist pattern on the plasma layer, forming a via hole using the photoresist pattern as a mask to open the lower metal line layer, and forming a via contact by burying a metal material in the via hole.

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Office Action from the Korean Intellectual Property Office, dated Oct. 20, 2006, in counterpart Korean Patent Application No. 10-2005-0093464.

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