Method for forming metal line of semiconductor device

Details Method for forming metal line of semiconductor device Method for forming metal line of semiconductor device

2008-10-31

2010-02-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S642000, C438S688000, C257SE21577, C257SE21582

Reexamination Certificate

active

07659195

ABSTRACT:
A method for forming metal lines of a semiconductor device is disclosed. The metal line forming method includes forming plugs by perforating via-holes in an interlayer dielectric layer formed on a semiconductor substrate and burying a conductive material in the via-holes, sequentially forming at least two metal layers on the interlayer dielectric layer formed with the plugs, the metal layers having a difference in the size of metal grains of each metal layer, etching an uppermost first metal layer of the at least two metal layers using a photoresist pattern formed on the first metal layer as an etching mask using a first etching gas, and etching the partially etched first metal layer using a second etching gas.

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