Method for forming metal line of semiconductor device

Details Method for forming metal line of semiconductor device Method for forming metal line of semiconductor device

2008-03-11

2008-03-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S677000, C438S679000, C438S688000, C438S761000, C438S763000

Reexamination Certificate

active

07341942

ABSTRACT:
A method for forming a metal line of a semiconductor device forms an aluminum line having an excellent orientation. A specific resistance of a metal line is reduced, thereby enabling sufficient supply of a desired electric current. The method includes steps of forming a lower reflection preventing layer on a silicon wafer, forming a first aluminum layer on the lower reflection preventing layer, forming a second aluminum layer on the first aluminum layer, lowering a surface roughness of the second aluminum layer, forming an upper reflection preventing layer on the second aluminum layer, and forming an aluminum line.

REFERENCES:
patent: 5932492 (1999-08-01), Hahm et al.
patent: 6077571 (2000-06-01), Kaloyeros et al.
patent: 6194037 (2001-02-01), Terasaki et al.
patent: 2000-183168 (2000-06-01), None
patent: 10-2001-0065194 (2001-07-01), None

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