Method for forming metal line of semiconductor device

Details Method for forming metal line of semiconductor device Method for forming metal line of semiconductor device

1997-10-23

2000-11-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438131, 438600, 438669, 438682, 438684, H01L 2182, H01L 2144

Patent

active

061469998

ABSTRACT:
A method for forming a metal line of a semiconductor device is suitable for forming a conductive material with strong connection force, by irradiating the region between metals to be connected with each other, with laser beams. It comprises the steps of: forming a plurality of metal lines on a substrate; depositing a first conductive material over the substrate including the metal lines; irradiating the first conductive material between the metal lines to be connected, with laser beams, before forming a second conductive material; and removing the first conductive material excluding the second conductive material.

REFERENCES:
patent: 4630355 (1986-12-01), Johnson
patent: 4835118 (1989-05-01), Jones
patent: 4931353 (1990-06-01), Tanielian
Wolf, S.; "Silicon Processing for the VLSI Era, vol.2--Process Integration", 1990.

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