Method for forming metal line

Details Method for forming metal line Method for forming metal line

1996-09-13

1998-10-13

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438626, 438637, 438700, 438692, H01L 2144, H01L 21463

Patent

active

058211640

ABSTRACT:
A method of forming a metal line structure for use with a semiconductor device includes the steps of: preparing a semiconductor substrate; forming a first line on the semiconductor substrate; forming a plug pattern on the first line; forming at least one insulating layer on an exposed surface of the first line and on the plug pattern; planarizing the insulating layer and, simultaneously, removing the plug pattern to form a contact hole which exposes at least a portion of the first line; and forming a second line in the contact hole such that the second line is configured to couple with the first line.

REFERENCES:
patent: 5158910 (1992-10-01), Cooker
patent: 5302551 (1994-04-01), Iranmanesh et al.
patent: 5518963 (1996-05-01), Park
patent: 5616519 (1997-04-01), Ping

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