Method for forming metal contact in semiconductor device

Details Method for forming metal contact in semiconductor device Method for forming metal contact in semiconductor device

2006-12-26

2006-12-26

Menz, Douglas (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S695000, C438S637000

Reexamination Certificate

active

07153771

ABSTRACT:
A method for forming a metal contact in a semiconductor device includes the steps of: forming a bottom wire connected with a metal wire on a substrate; forming an inter-layer insulation layer on an entire surface of a substrate substructure including the bottom wire and the substrate; forming a metal contact hard mask layer on the inter-layer insulation layer; forming a photosensitive layer pattern defining a contact hole on the metal contact hard mask layer; etching the metal contact hard mask layer by using the photosensitive layer pattern as an etch barrier layer; etching the inter-layer insulation layer with use of the etched metal contact hard mask layer as an etch barrier layer to thereby form the contact hole; and forming a metal contact connected to the substrate within the contact hole.

REFERENCES:
patent: 5562801 (1996-10-01), Nulty
patent: 6103455 (2000-08-01), Huang et al.
patent: 10-2000-0007306 (2000-02-01), None
patent: 10-2002-0002961 (2002-01-01), None

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