Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2006-06-13
2006-06-13
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S960000
Reexamination Certificate
active
07060587
ABSTRACT:
A method for forming macropores in a substrate is disclosed. On a substrate a pattern of submicron features is formed. This pattern is covered with a layer, which is preferably selectively removable with respect to the substrate and the submicron features. This cover layer is removed until the submicron features are exposed. The submicron features are then etched selectively to the cover layer, thereby creating a pattern of submicron openings in this cover layer. The patterned cover layer is used as a hardmask to etch macropores in the substrate.
REFERENCES:
patent: 6143628 (2000-11-01), Sato et al.
patent: 6662631 (2003-12-01), Baklanov et al.
patent: 2003/0148088 (2003-08-01), Padmanabhan et al.
patent: 2003/0222048 (2003-12-01), Asakawa et al.
patent: 2004/0053167 (2004-03-01), Hotta
patent: 2005/0117194 (2005-06-01), Kim et al.
patent: 2005/0133910 (2005-06-01), Riedl et al.
patent: 2005/0255581 (2005-11-01), Kim et al.
patent: 0977280 (2000-02-01), None
patent: 1132952 (2001-09-01), None
R.B. Wehrspohn, et al., Electrochemically Prepared Pore Arrays for Photonic-Crystal Applications, Material Research Bulletin, Aug. 2001, pp. 623-626.
M. Christophersen, et al., Crystal Orientation Dependence and Anisotropic Properties of Macropore Formation of p- and n-Type Silicon, Journal of Electrochemical Society, No. 148, 2001, E267-E275.
T. Sato, et al., SON (silicon on nothing) MOSFET using ESS (Empty Space in Silicon) technique for SoC applications, IEEE, 2001, pp. 809-812.
R. Vos, et al., Removal of Submicrometer Particles from Silicon Wafer Surfaces Using HF-Based Cleaning Mixtures, Journal of Electrochemical Soc. 2001, No. 148, p. 683.
K. Kok, et al., In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching, J. Vac. Sci. Technol. B 20 (1), Jan./Feb. 2002, pp. 154-158.
Bearda Twan
Kunnen Eddy
Coleman W. David
Interuniversitair Microelektronica Centrum (IMEC)
Knobbe Martens Olson & Bear LLP
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